Amplifying solid-state imaging device, and method for driving the same

ABSTRACT

By providing dummy pixels separately from effective pixels, the total number of pixel rows is equalized with the number of horizontal sync signals included in one frame interval (which is called an “HD number”). A period during which a reset signal for an electronic shuttering operation is being supplied to an arbitrary pixel row overlaps with a period during which another pixel row is selected to perform a readout operation thereon. Thus, it is possible to suppress a variation in reset potential among effective pixels.

BACKGROUND OF THE INVENTION

The present invention relates to an amplifying solid-state imagingdevice and a method for driving the same.

An amplifying solid-state imaging device, as well as a CCD solid-stateimaging device, adopts “electronic shuttering” as a sort of electronicdiaphragm. The “electronic shuttering” operation is performed to reset asignal charge storage section just before a photodiode in each pixelstarts to store the signal charge, which has been created by thephotodiode itself through photoelectric conversion, thereby making thecharge storage period of the photodiode variable. The signal chargestored in pixels is read out on a row-by-row basis responsive to ahorizontal sync signal. Thus, the electronic shuttering operation isalso performed on the row-by-row basis (which is called a “focal planeoperation”). More specifically, the electronic shuttering operation isperformed on a certain row and then the signal charge starts to bestored. And after a predetermined time has passed since the start ofcharge storage, a signal readout operation is performed. When thereadout operation is started, the storage section is reset again for thereadout. The “predetermined time” defines the charge storage period ofeach photodiode and is of an equal length for every row. Accordingly,supposing each pixel is receiving light with the same intensity, thesame quantity of charge will be stored on each and every rowtheoretically speaking.

FIG. 1 illustrates a schematic configuration of a conventionalamplifying solid-state imaging device 100. In the device 100, an imagingsection is made up of a plurality of pixels 102 arranged in columns androws. Each of these pixels 102 includes a photodiode for storing chargein a quantity corresponding to the amount of light received. As shown inFIG. 1, a row select encoder 103 for selecting one pixel row afteranother from the imaging section is disposed on the right-hand side ofthe imaging section. In the example illustrated in FIG. 1, the number ofpixel rows is m, which is equal to or larger than two. The row selectencoder 103 includes the number m of row selectors that are connected inseries to each other. An i^(th) (where 1≦i≦m) row selector generates areset signal for the electronic shuttering operation at a predeterminedtime, and then sends the signal to all the pixels 102 belonging to thei^(th) row. The row selectors included in the row select encoder 103output the reset signal for the electronic shuttering operation atrespectively times, which are different from each other among the rows.That is to say, the reset signal is sequentially output in thedescending order, i.e., from the first through m^(th) rows.

On the other hand, the row selecting operation for readout (i.e., anordinary row selection) is also performed sequentially by the number mof row selectors. The interval between the electronic shuttering andreadout operations is preset at the same length for every row. Thesignal read out from a selected row is supplied by a column selectdriver 107 to an output buffer 111, from which the signal is output as apixel signal.

When the electronic shuttering operation is performed, the photodiodewithin each pixel 102 has the potential thereof compulsorily reset at apredetermined level (which will be called a “reset potential” in thisspecification). The reset potential is supposed to be the same in eachand every pixel 102 as a matter of principle. However, the presentinventors found that since a reset potential on a certain row mightshift into a different reset potential on another row, horizontal noisemight appear on the screen as a result. The horizontal noise alwaysappears on a particular set of rows on the screen, thus degrading theresultant image quality.

SUMMARY OF THE INVENTION

An object of the present invention is providing (1) an amplifyingsolid-state imaging device that can substantially eliminate thehorizontal noise resulting from the electronic shuttering operation and(2) a method for driving the device.

To achieve this object, the present invention provides dummy pixel rowsand drives these dummy pixel rows in the same way as an imaging sectionwithin an effective pixel area, thereby providing a reset signal for theelectronic shuttering operation to each pixel row in the imagingsection. As a result, the reset potentials resulting from the electronicshuttering operation can be equalized among all the pixels within theimaging section, thus eliminating the horizontal noise from the screen.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a schematic configuration of a conventionalamplifying solid-state imaging device.

FIG. 2 illustrates a detailed configuration of a pixel in an amplifyingsolid-state imaging device.

FIG. 3 illustrates a configuration for an amplifying solid-state imagingdevice according to a first embodiment of the present invention.

FIG. 4 is a timing diagram illustrating control signals supplied by therow selectors within the row select encoder shown in FIG. 3.

FIG. 5 is a circuit diagram illustrating a row selector associated withan i^(th) row and included in the row select encoder shown in FIG. 3.

FIG. 6 is a timing diagram illustrating some control signals associatedwith the i^(th) and n^(th) rows in the device shown in FIG. 3, where1≦i≦m and n≠i.

FIGS. 7, 8, 9 and 10 illustrate an equivalent circuit of a pixel on thei^(th) row, a schematic cross-sectional structure of the resettingdevice and a distribution of surface potentials at the times a-1, b-1, cand d shown in FIG. 6, respectively.

FIG. 11 is a timing diagram illustrating control signals supplied by therow selectors within the row select encoder in the conventional deviceshown in FIG. 1 including no dummy pixels.

FIG. 12 is a timing diagram illustrating some control signals associatedwith the i^(th) and n^(th) rows in the conventional device shown in FIG.1, where 1≦i≦m and n≠i.

FIGS. 13 and 14 illustrate an equivalent circuit of a pixel on thei^(th) row, a schematic cross-sectional structure of the resettingdevice and a distribution of surface potentials at the times a-2 and b-2shown in FIG. 12, respectively.

FIG. 15 illustrates a configuration for an amplifying solid-stateimaging device according to a second embodiment of the presentinvention.

FIG. 16 is a circuit diagram illustrating respective configurations ofthe row selector associated with the m^(th) row and the dummy rowselector in the device shown in FIG. 15.

FIG. 17 is a timing diagram illustrating control signals supplied fromthe row selectors and the dummy row selector in the device shown in FIG.15.

FIG. 18 illustrates a configuration for an amplifying solid-stateimaging device according to a third embodiment of the present invention.

FIG. 19 is a circuit diagram illustrating respective configurations ofthe row selector associated with the m^(th) row and the dummy rowselector in the device shown in FIG. 18.

FIG. 20 is a timing diagram illustrating control signals supplied fromthe row selectors and the dummy row selector in the device shown in FIG.18.

FIG. 21 is a circuit diagram illustrating another exemplary pixelconfiguration usable according to the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, preferred embodiments of an amplifying solid-state imagingdevice according to the present invention will be described withreference to the accompanying drawings. FIGS. 2 and 3 illustrate aconfiguration of an amplifying solid-state imaging device 1 according toa first exemplary embodiment of the present invention.

First, referring to FIG. 2, the amplifying solid-state imaging device 1includes a plurality of pixels 2 arranged in matrix, i.e., in columnsand rows, within a semiconductor region, which may be a region in asilicon substrate. Although a 2×2 matrix of pixels is illustrated inFIG. 2, a great number of pixels are actually formed in columns androws. In this specification, the respective numbers of rows and columnsof pixels provided within an effective pixel area to generate pixelsignals are represented by m and 1 (where m and 1 are both positiveintegers equal to or larger than two). In a typical solid-state imagingdevice, m and 1 are both within the range from 50 to 2,000. In thisembodiment, m and 1 are supposed to be 480 and 640, respectively.

Each of these pixels 2 includes a signal storage section, which in turnincludes a photoelectric transducer like a photodiode. Responsive tolight incident on the photoelectric transducer, each signal storagesection can store information, corresponding to the intensity of thelight, as a “potential or a quantity of charge”. Although eachphotoelectric transducer is in a first potential state (reset potential)during resetting, a state transition subsequently takes place from thefirst into a second potential state as a result of creation and storageof charge responsive to the incident light. The second potential stateis represented by a level variable with the intensity of the incominglight. In this specification, the “second potential state” is variablewith the total amount of light that has been incident on thephotoelectric transducer after resetting was performed as the electronicshuttering operation. A more detailed internal configuration of eachpixel 2 will be described later.

The device 1 includes a plurality of lines and circuits for selectingand accessing a particular one of the pixels 2. These lines, circuits,transistors constituting respective pixels and so on are formed on asubstrate by various techniques similar to well known ones forfabricating a semiconductor integrated circuit. In this embodiment, arow select encoder 3 is electrically connected to all of the pixels 2through plural pairs of reset and row select lines 4 and 5. Each singlereset line 4 is connected to all of the pixels 2 belonging to a singlerow associated with the reset line 4. In the same way, each single rowselect line 5 is also connected to all of the pixels 2 belonging to asingle row associated with the row select line 5. That is to say, thenumber of the pairs of lines 4 and 5, extending from the row selectencoder 3, is equal to the number of the pixel rows in the matrix.

To select a particular one of the rows, the row select encoder 3selectively changes the potential on a row select line 5 associated withthe particular row from logically “Low” into “High”, for example. Inthis case, the potentials on the other row select lines 5 associatedwith the remaining rows are held at logically “Low”. As a result, apotential, corresponding to the logically “High” state, is supplied tothe respective control terminals of switching devices in all the pixels2 included in the particular row, thereby turning these switchingdevices ON. Upon the activation of the switching devices, potentials,corresponding to the information that has been stored in respectivesignal storage sections on the selected row, appear on associatedvertical signal lines 6. In this case, the signal storage section ofeach pixel 2 is electrically disconnected from an associated verticalsignal line 6 on the remaining rows other than the selected one. Theconfiguration and operation of a circuit for sensing information thisway will be described in greater detail later.

The information, which has been stored in the signal storage sections ofall the pixels 2 included in a selected row, is output to all thecorresponding vertical signal lines 6 and then read out column by columnby a horizontal shift register (column select driver) 7. The informationis ultimately output as a signal through an output buffer (outputamplifier) 11.

Next, the configuration of each pixel 2 according to this embodimentwill be described in further detail. As shown in FIG. 2, the pixel 2includes: a photodiode 21 functioning as a signal storage section; andan MOS transistor 23, whose gate electrode 22 is connected to thephotodiode 21. The photodiode 21 is implementable as a pn junction diodeformed in a silicon substrate, for example. The MOS transistor 23 mayhave an ordinary MOS structure including channel, source and drainregions within a silicon substrate, for example. The MOS transistor 23functions as a driver (amplifier) in a signal detector, which plays animportant role in amplifying and reading out a tiny variation in thepotential state of the photodiode 21. In the illustrated embodiment, nocapacitor is particularly inserted between the gate electrode 22 of theMOS transistor 23 and the photodiode 21. Optionally, a capacitor may beinserted therebetween.

The pixel 2 further includes a resetting device 24 and a switchingdevice 25. The resetting device 24 is an MOS transistor (resettransistor), whose gate electrode is connected to an associated resetline 4. The drain of the MOS transistor 24 is connected to a first powersupply terminal (V_(DD)) 26 through a power line 260, and the sourcethereof is connected to the photodiode 21. When the potential on thereset line 4 associated with the selected row is selectively changed bythe row select encoder 3 from logically “Low” into “High”, the resettingdevices 24 on the selected row turn ON. As a result, the charge storedon the photodiodes 21 is drained toward the first power supply terminal(V_(DD)) 26 through the power line 260. The potential at each photodiode21, i.e., that at the gate electrode 22 of the driver 23, iscompulsorily reset at a certain value determined by the supply potentialV_(DD) at the first power supply terminal 26. After the resettingoperation is finished, the potential at the photodiode 21 graduallyvaries with the intensity of light received by the pixel 2. It isbecause carriers are created due to the photoelectric conversionfunction of the photodiode 21 and then stored in the photodiode 21 thatthe potential state of the photodiode 21 is variable with the incidenceof light.

The switching device 25 in each pixel 2 is an MOS transistor, whose gateelectrode is connected to an associated row select line 5. The drain ofthe MOS transistor 25 is connected to the source of the driver 23 andthe source thereof is connected to an associated vertical signal line 6.When the potential on the row select line 5 shown in FIG. 2 isselectively changed by the row select encoder 3 from logically “Low”into “High”, the switching device 25 turns ON. As a result, currentflows from the first power supply terminal (V_(DD)) 26 through thedriver 23, switching device 25, vertical signal line 6 and load device27 into a second power supply terminal (V_(SS)) 28. In this case, thepotential on the vertical signal line 6 is variable with the potentialstate of the photodiode 21 (i.e., the potential at the gate electrode 22of the MOS transistor 23). Accordingly, the potential on the verticalsignal line 6 has a level variable with the second potential state atthe signal storage section of the pixel 2.

Considering a particular column, the driver 23, belonging to theselected row, and an associated load device 27 are connected in seriesto each other between the first and second power supply terminals(V_(DD)) 26 and (V_(SS)) 28 to form a source follower circuit. In otherwords, a single load device 27 is allocated to each column, and eachdriver 23 on the selected row is electrically connected to an associatedload device 27 via an associated switching device 25. Such a sourcefollower circuit can amplify the quantity of signal charge stored ineach pixel and then output the charge as a potential signal. In thisspecification, the load devices 27 corresponding to all the columns willsometimes be collectively called a “load circuit” 30.

To utilize the chip area effectively, the same power is supplied fromthe first power supply terminal (V_(DD)) 26 through the common powerline 260 to the photodiodes 21 for the resetting purpose, and to thesource follower circuits.

Next, the feature of the amplifying solid-state imaging device 1according to the first embodiment will be described with reference toFIG. 3. As shown in FIG. 3, the device 1 additionally includes at leastone dummy pixel row, which is provided separately from the number m ofordinary pixel rows. The number m of pixel rows are located within aneffective pixel area and make up an imaging section. On the other hand,the at least one dummy pixel row is located out of the effective pixelarea and makes up a dummy imaging section. According to this embodiment,the number of the dummy pixel row(s) is obtained by subtracting m fromthe number of horizontal sync signals included in one frame interval. Inthis specification, the number of the horizontal sync signals per frameinterval will be called an “HD number”. In this exemplary embodiment,since m is 480 and the HD number is 525 (in compliance with the NTSCstandard), the number of the dummy pixel row(s) (=HD number−m) is 45.

Each of the pixels belonging to every dummy pixel row has totally thesame configuration as each pixel located within the effective pixelarea. That is to say, each pixel on every dummy pixel row also includesthe photodiode 21 and transistors just like the pixel 2 shown in FIG. 2,and is also connected to the load circuit 30 and to the column selectdriver 7 through the associated vertical signal line 6. Thus, accordingto this embodiment, the ordinary imaging section cannot be distinguishedfrom the dummy imaging section by appearances.

When a dummy pixel row is selected by the row select encoder 3, theresetting and switching devices 24 and 25 included in the pixelsbelonging to the dummy pixel row receive a control signal and operatenormally. Turn the switching device 250N within a dummy pixel, and acurrent flows from the first power supply terminal (V_(DD)) 26 throughthe driver 23 and switching device 25 within the dummy pixel, verticalsignal line 6 and load device 27 into the second power supply terminal(V_(SS)) 28 as shown in FIG. 2.

However, the dummy pixels do not have to store signal informationresponsive to incoming light. Instead, each dummy pixel has only toallow the current to flow from the first power supply terminal (V_(DD))26 through the driver 23, switching device 25, vertical signal line 6and load device 27 into the second power supply terminal (V_(SS)) 28 byturning the switching device 250N just like an ordinary pixel.Accordingly, the dummy pixels need not perform photoelectric conversionfunction, either. In view of their intended function, the dummy pixelsmay be covered with a light blocking film and need not include anyphotodiode. That is to say, the role expected of the dummy pixel row isto equalize the reset potentials among all the rows within the imagingsection by preventing a reset state from being varied on a pixel row, onwhich resetting is being carried out as the electronic shutteringoperation. This function of the dummy pixel row will be described infurther detail later. Before that, it will be described with referenceto FIG. 4 how the device 1 is driven.

FIG. 4 is a timing diagram illustrating control signals supplied by therow selectors included in the row select encoder 3. On the top of FIG.4, the waveform of the horizontal sync signal HD is illustrated. Insynchronism with the horizontal sync signal HD, the row selectors sendthe row select signals SL₁ through SL_(m+3) and reset signals RS₁through RS_(m+3) to associated rows. In FIG. 4, only the signalsassociated with just a few rows are illustrated. It is noted that thetime progresses rightward in FIG. 4.

In FIG. 4, VSIN is a signal getting a row selecting operation for signalreading started by the row select encoder 3. VSSIN is a signal getting arow selecting operation for electronic shuttering started by the rowselect encoder 3. The signal VSIN is input to the row select encoder 3once a frame interval, while the signal VSSIN is input to the row selectencoder 3 at least once a frame interval. CSL is a selection sync signaldefining respective times the readout operation should be performed,while CRS is a reset sync signal defining respective times the resetoperation should be performed. The row select encoder 3 receives thesesignals and generates various types of control signals in synchronismwith the horizontal sync signal HD, thereby performing the electronicshuttering and row selecting operations.

FIG. 5 illustrates a row selector associated with an i^(th) row. Therow, selectors associated with the first through (m+3)^(rd) rows, eachhaving the configuration shown in FIG. 5, are connected in seriestogether to form the row select encoder 3. The row select encoder 3includes two columns of vertical shift registers, i.e., first and secondshift registers. Each vertical shift register includes a plurality offlip-flop circuits 50, which are connected in series to each other.

The 1^(st)-row part of the first shift register receives the horizontalsync signal HD and the start pulse signal VSIN supplied as a trigger ofthe readout operation. The output Q_(i) of the i^(th)-row part of thefirst shift register is supplied to the D terminal of the flip-flopcircuit 50 included in the (i+1)^(st)-row part of the first shiftregister. In this manner, the first shift register sequentially performssuch an output operation from the first through the last rows insynchronism with the horizontal sync signal HD. On the other hand, the1^(st)-row part of the second shift register receives the horizontalsync signal HD and the start pulse signal VSSIN supplied as a trigger ofthe electronic shuttering operation. The output QS_(i) of the i^(th)-rowpart of the second shift register is supplied to the D terminal of theflip-flop circuit 50 included in the (i+1)^(st)-row part of the secondshift register. In this manner, the second shift register also performsa similar output operation sequentially from the first through the lastrows in synchronism with the horizontal sync signal HD.

Based on the outputs Q_(i) and QS_(i) of the first and second shiftregisters, the selection sync signal CSL and the reset sync signal CRS,the row select encoder 3 generates the row select signal SL_(i) andreset signal RS_(i) at respective times shown in FIG. 4. Then, the rowselect encoder 3 supplies these control signals to the pixels on thei^(th) row through the row select and reset lines 5 and 4 associatedwith the i^(th) row.

Referring back to FIG. 4, while the signal VSIN is being at thelogically “High” level, a first pulse of the horizontal sync signal HDis supplied as the first HD for the frame interval in question.Thereafter, when the 525^(th) HD is supplied, the frame interval ends.And after the signal VSIN has risen to the “High” level, the next frameinterval starts.

In synchronism with the first HD, the row select encoder 3 generates therow select signal SL₁ and the reset signal RS₁ and sends these controlsignals to the pixels on the first row to perform a readout operation onthe pixels belonging to the first row. Thereafter, in synchronism withthe second HD, the row select encoder 3 generates the row select signalSL₂ and the reset signal RS₂ and sends these control signals to thepixels on the second row to perform a readout operation on the pixelsbelonging to the second row. A similar operation will be sequentiallyperformed on the remaining rows.

On the other hand, in synchronism with the horizontal sync signalsupplied while the signal VSSIN is being at the logically “High” level(i.e., the fourth HD in FIG. 4), the row select encoder 3 generates thereset signal RS₁ and sends the signal to the pixels on the first row. Asa result, resetting for the electronic shuttering operation is carriedout on all the pixels belonging to the first row. Thereafter, insynchronism with the fifth HD, the row select encoder 3 generates thereset signal RS₂ and sends the signal to the pixels on the second row.As a result, resetting for the electronic shuttering operation iscarried out on all the pixels belonging to the second row. A similaroperation will be sequentially performed on the remaining rows.

As can be seen from FIG. 4, whenever a reset signal for the electronicshuttering operation is supplied to an arbitrary i^(th) (where 1≦i≦m)row included in the effective pixel area, a readout operation isperformed on another row. For example, while resetting for theelectronic shuttering operation is being performed on the m^(th) row, areadout operation is being performed on the (m+3)^(rd) row. Were it notfor the dummy pixel rows, i.e., the (m+1)^(st) through (m+3)^(rd) rowsin this case, the readout operation could not be performed on any rowwhile resetting for the electronic shuttering operation is beingperformed on the (m−2)^(nd) to the m^(th) rows

According to this embodiment, dummy pixel rows are provided and drivenjust like the other rows in the imaging section within the effectivepixel area. In this manner, a reset signal for the electronic shutteringoperation can be supplied to each and every row within the imagingsection under the same condition. Thus, reset potentials resulting fromthe electronic shuttering operation can be equalized among all thepixels within the imaging section, and therefore, no horizontal noiseappears on the screen anymore. Hereinafter, it will be described infurther detail why the horizontal noise disappears thanks to theexistence of dummy pixels.

FIG. 6 is a timing diagram illustrating respective control signalsassociated with the i^(th) and n^(th) rows, where 1≦i≦m and n≠i. First,at a time a-1, a control signal for the electronic shuttering operationis being supplied to the ith row, but the row select signal SL_(i)remains “Low”. Accordingly, the switching devices 25 on the i^(th) roware kept OFF. In contrast, since the reset signal RS_(i) has risen tothe “High” level, the MOS transistors, which function as the resettingdevices 24 on the i^(th) row, have been turned ON and are nowconducting. As a result, the first power supply terminal (V^(DD)) 26 iselectrically connected to the photodiodes 21, and the charge that hasbeen stored on the photodiodes 21 is drained to the first power supplyterminal (V_(DD)) 26. By performing the reset operation in this manner,the potential in the charge storage region of each of these photodiodes21 is compulsorily reset at the first potential.

Next, at a time b-1, a readout operation is being performed on thei^(th) row. The readout operation is started by turning the switchingdevices 25 on the i^(th) row ON with the rise of the row select signalSL_(i) from the “Low” into “High” level. While the switching devices 25on the i^(th) row are conducting, current flows from the first powersupply terminal (V_(DD)) 26 toward the second power supply terminal(V_(SS)) 28 through the vertical signal lines 6 as described above. As aresult, a signal potential, corresponding to the quantity of charge thathas been created and stored on the pixels on the ith row between thetime a-1 during resetting for the electronic shuttering operation andthe time b-1, is output onto the vertical signal lines 6.

Subsequently, at a time c, the reset signal RS_(i) has risen from the“Low” into the “High” level, thereby turning the resetting devices 24 onthe i^(th) row ON. On the other hand, the switching devices 25 on thei^(th) row are kept ON. Since the reset signal RS_(i) has risen to the“High” level, the MOS transistors, which function as the resettingdevices 24 on the i^(th) row, have also been turned ON and are nowconducting. As a result, the first power supply terminal (V_(DD)) 26 iselectrically connected to the photodiodes 21, and the charge that hasbeen stored on the photodiodes 21 is drained to the first power supplyterminal (V_(DD)) 26.

Then, at a time d, the potential state of the photodiodes 21 afterresetting is sensed. This sensing operation is performed in the same wayas that performed at the time b-1 before resetting. And based on achange in potential state of the photodiodes 21 before and afterresetting at the time c, the information that has been stored in thepixels is read out as a signal.

According to this embodiment, at the time a-1, a reset operation forelectronic shuttering is being performed on the i^(th) row, while areadout operation is being performed on the n^(th) row. The n^(th) rowmay be any arbitrary row belonging to either the ordinary imagingsection or the dummy imaging section. The readout operation on then^(th) row is started by turning the switching devices 25 on the n^(th)row ON with the rise of the row select signal SL_(n) from the “Low” into“High” level. While the switching devices 25 on the n^(th) row areconducting, current flows from the first power supply terminal (V_(DD))26 toward the second power supply terminal (V_(SS)) 28 through thevertical signal lines 6 as described above. As a result, a signalpotential, corresponding to the quantity of charge that has been storedon the pixels on the n^(th) row, is output onto the vertical signallines 6.

If the n^(th) row belongs to the ordinary imaging section, thepotential, which has been output onto the vertical signal lines 6 as aresult of the readout operation, is usable as an effective pixel signal.In contrast, if the n^(th) row belongs to the dummy imaging section, thepotential, which has been output onto the vertical signal lines 6 as aresult of the readout operation, is non-usable as an effective pixelsignal. The readout operation on the dummy imaging section is performedfor the very purpose of making the current flow from the first to secondpower supply terminal (V_(DD)) 26 to (V_(SS)) 28 through the verticalsignal lines 6 while resetting for the electronic shuttering operationis being performed on the i^(th) row (where 1≦i≦m).

Hereinafter, the potential states of a photodiode 21 on the i^(th) rowwhile these operations are being performed will be described withreference to FIGS. 7 through 10.

FIG. 7 illustrates an equivalent circuit of a pixel on the i^(th) row, aschematic cross-sectional structure of the resetting device 24 and adistribution of surface potentials at the time a-1. In the exampleillustrated in FIG. 7, the resetting device 24 is implemented as ann-channel MOS transistor. An n-type doped region of the photodiode 21also functions as the source region of the resetting device 24. Theresetting device 24 is surrounded by a field oxide 33 such as a LOCOSfilm. A channel stopper 32 doped with a p-type dopant is formed underthe field oxide 33.

At the time a-1, resetting for the electronic shuttering operation isbeing performed. Accordingly, the potential at the photodiode 21 (morespecifically, a surface potential of the n-type doped regions of thephotodiode 21) is substantially equal to a potential in the drain region31 of the resetting device 24 (hereinafter, simply referred to as a“reset drain 31”). The reset drain 31 is connected to the first powersupply terminal (V_(DD)) 26 through the power line 260. Since a readoutoperation is performed on the n^(th) row according to this embodiment, asource follower current I_(d) flows through the power line 260. Thiscurrent I_(d) is much larger than the current flowing from the firstpower supply terminal (V_(DD)) 26 to the photodiode 21 on the i^(th) rowas a result of resetting the photodiode 21 (hereinafter, this currentwill be referred to as “reset drain current”). For example, the sourcefollower current I_(d) flowing through the load circuit 30 is on theorders of several to several hundreds μA, whereas the reset draincurrent is on the orders of several to several hundreds fA. Supposingthe principal resistance of the power line is represented as R_(i), avoltage drop of I_(d)×R_(i) is caused in the power supplied to the resetdrain 31. Thus, the potential at the reset drain 31 is represented asV_(DD)′=V_(DD)−I_(d)×R_(i).

The interconnection resistance of the common power line 260 differsdepending on the layout thereof, but is ordinarily on the orders ofseveral tens Ω to several kΩ. Suppose the source follower current I_(d)per pixel is 10 μA, the reset drain current is 10fA and theinterconnection resistance of the common power line 260 is 1 kΩ, forinstance. In such a case, the voltage drop of the power supplied to thepixel while the reset drain current is flowing is 10 fA×1 kΩ=10 pV. Onthe other hand, the voltage drop of the power supplied to the pixelwhile the source follower current is flowing is 10 μA×1 kΩ=10 mV. As canbe seen, since the reset drain current is negligible compared to thesource follower current, the effects of the voltage drop thereof arealso negligible.

At the time a-1, since the switching device 25 on the i^(th) row is notconducting, no source follower current flows through the switchingdevice 25 on the i^(th) row. It should be noted, however, that thesource follower current I_(d) does flow through the switching device 25on the n^(th) row. As described above, according to this embodiment,whenever resetting for the electronic shuttering operation is beingperformed on an arbitrary i^(th) row (where 1≦i≦m), a readout operationis being performed on another row. This principle is applicable to allthe rows within the effective pixel area (where i=1, 2, . . . , m−1, andm).

Next, referring to FIG. 8, charge has been stored in the photodiode 21at the time b-1, when the potential thereof is (V_(DD)′−V_(sig)) thathas decreased by V_(sig) from the potential V_(DD)′ at the time ofresetting. The magnitude of V_(sig) is determined depending on thequantity of charge that has been created and stored throughphotoelectric conversion. This potential (V_(DD)′−V_(sig)) is applied tothe gate electrode of the driver 23. Also, at the time b-1, the readoutoperation on the i^(th) row has already been started, and the sourcefollower current I_(d) is now flowing through the power line 260. Thiscurrent I_(d) flows from the first power supply terminal (V_(DD)) 26through the driver 23 and switching device 25 on the i^(th) row into theload circuit 30. Since the readout operation is not being performed onthe rows other than the i^(th) row, the source follower current I_(d)flowing through the other rows at the time b-1 is substantially the sameas that at the time a-1. At the time b-1, no reset drain current flows,but this current is negligible as described above.

Then, referring to FIG. 9, resetting for the readout operation is beingperformed at the time c and the charge that has been stored in thephotodiode 21 is being drained to the first power supply terminal(V_(DD)) 26. As a result, the potential at the photodiode 21 isequalized with the potential V_(DD)′ of the reset drain 31. Thepotential V_(DD)′ is applied to the gate electrode of the driver 23.Accordingly, a signal potential corresponding to the potential V_(DD)′starts to appear on the vertical signal line 6.

Subsequently, referring to FIG. 10, the resetting device 24 has beenturned OFF again at the time d. Immediately after resetting, thepotential V_(DD)′ was applied to the gate electrode of the driver 23.Accordingly, a signal potential corresponding to the potential V_(DD)′appears on the vertical signal line 6. As a result, the signalinformation sensed from the pixel on the i^(th) row has a magnituderepresented as V_(DD)′−(V_(DD)′−V_(sig))=V_(sig).

As described above, according to this embodiment, the potential at thephotodiode 21 is compulsorily reset at V_(DD)′ by resetting for theelectronic shuttering operation. If a light blocking metal film made ofaluminum, for example, is used as the power line 260 to isolate therespective pixels from each other, then the potentials V_(DD)′ can besubstantially equalized among all the rows. In other words, thevariation in reset potential between a pair of pixel rows can besuppressed. As a result, an image of high quality with reducedhorizontal noise can be provided.

Next, it will be described with reference to FIGS. 11 through 14 howhorizontal noise is caused in a conventional amplifying solid-stateimaging device including no dummy pixels. This device is obtained byremoving the dummy pixels and associated row selectors from the device 1shown in FIG. 3. In this case, the number of horizontal sync signals HDincluded in one frame interval is not equal to the number of pixel rows.

FIG. 11 is a timing diagram illustrating control signals supplied by therow selectors in the row select encoder within the amplifyingsolid-state imaging device including no dummy pixels as a comparativeexample of the timing diagram illustrated in FIG. 4. As shown in FIG.11, resetting for the electronic shuttering operation is being performedon the first row and a readout operation is being performed on thefourth row at a time I. At a time II, resetting for the electronicshuttering operation is being performed on the m^(th) row, but noreadout operation is being performed on any row.

FIG. 12 is a timing diagram illustrating respective control signalsassociated with the i^(th) and n^(th) rows, where 1≦i≦m, 1≦n≦m and n≠i.First, at a time a-2, a control signal for the electronic shutteringoperation is being supplied to the i^(th) row. That is to say, the rowselect signal SL_(i) remains “Low”, but the reset signal RS_(i) hasrisen to the “High” level. Accordingly, the resetting devices 24 on theith row are now conducting. As a result, the potential in the chargestorage region of each photodiode 21 is compulsorily reset at the firstpotential. At the time a-2, no readout operation is being performed onany row other than the i^(th) row. In such a case, resetting for theelectronic shuttering operation is being performed as shown in FIG. 13.Accordingly, the potential at the photodiode 21 is equalized with apotential at the reset drain 31. Since no source follower current I_(d)is flowing through the power line 260 at this time, the potential at thereset drain 31 is substantially equal to V_(DD). Accordingly, thepotential at the photodiode 21 after resetting is also V_(DD).Thereafter, the photodiode 21 will create and store charge in a quantitycorresponding to the amount of light received.

Next, at a time b-2, a readout operation is being performed on thei^(th) row. At this time, the source follower current I_(d) is nowflowing through the power line 260 and the pixel on the i^(th) row asshown in FIG. 14. Accordingly, the potential at the reset drain 31decreases to V_(DD)′=V_(DD)−I_(d)×R_(i). On the other hand, thepotential at the photodiode 21 is (V_(DD)−V_(sig)) that has decreased byV_(sig) from the potential V_(DD) at the time of resetting. As describedabove, the magnitude of V_(sig) is determined depending on the quantityof charge that has been created and stored through photoelectricconversion. This potential (V_(DD)−V_(sig)) is applied to the gateelectrode of the driver 23.

Subsequently, at a time c, resetting for the readout operation is beingperformed. At this time, since the source follower current I_(d) isflowing through the power line 260 and the pixel on the i^(th) row, thepotential at the photodiode 21 is compulsorily reset atV_(DD)′=V_(DD)−I_(d)×R_(i).

As a result, the signal information sensed from the pixel on the i^(th)row at the time d has a magnitude corresponding toV_(DD)′−(V_(DD)−V_(sig)).

In contrast, if the readout operation is being performed on any otherrow while resetting for the electronic shuttering operation is beingperformed on the i^(th) row, then signal information with a magnitudecorresponding to V_(sig) is obtained as already described with referenceto FIGS. 7 through 10. Accordingly, in the conventional device, avariation corresponding to the potential difference (V_(DD)″−V_(DD)) iscaused among the output signals of respective rows.

As can be seen from FIG. 11, resetting for the electronic shutteringoperation on a particular row and readout on any other row might beperformed concurrently in the conventional amplifying solid-stateimaging device. In the conventional device, however, while resetting forthe electronic shuttering operation is being performed on anotherparticular row (e.g., the m^(th) row), no readout operation might bebeing performed on any other row. That is to say, the reset stateresulting from the electronic shuttering operation differs among therows, thus causing the horizontal noise.

In contrast, according to the present invention, the electronicshuttering operation is performed under the same condition for therespective rows within the effective pixel area. For that purpose, dummypixel rows are provided in this embodiment, thereby equalizing the totalnumber of pixel rows with the number of horizontal sync signals (i.e.,the HD number) included in one frame interval.

FIG. 15 illustrates a configuration for an amplifying solid-stateimaging device 60 according to a second embodiment of the presentinvention. The device 60 is different from the device 1 of the firstembodiment in the number of dummy rows. In addition, the device 60further includes a dummy row selector A unlike the device 1.

According to the second embodiment, the number of dummy rows is one.Also, the dummy row selector A has a different configuration than thatof the other first through m^(th) row selectors. It should be noted thataccording to the first embodiment, the row selectors for the dummy rowshave the same configuration as the row selectors for effective pixels.

FIG. 16 illustrates respective configurations of the row selectorassociated with the m^(th) row and the dummy row selector A. The dummyrow selector A includes a D flip-flop 52 with a reset terminal R, atwhich the start pulse signal VSIN is received. More specifically, thedummy row selector A continuously outputs control signals SL_(dummy) andRS_(dummy) in synchronism with the horizontal sync signal HD after the Dflip-flop 52 has received the output Qm of the m^(th) row selector anduntil a start pulse signal VSIN for the next frame interval is received.

FIG. 17 is a timing diagram illustrating control signals supplied fromthe row selectors in the row select encoder 3 and the dummy row selectorA within the amplifying solid-state imaging device 60. As shown in FIG.17, after the readout operation has been performed on the m^(th) row,the row select signal SL_(dummy) and the reset signal RS_(dummy) arerepeatedly output in synchronism with the horizontal sync signal HD. Inother words, the readout operation is repeatedly performed on the samedummy pixel row. Thus, after the readout operation has been performed onall the rows within the ordinary imaging section and before the nextframe interval begins, the readout operation is repeatedly performed onthe dummy row, not on the ordinary imaging section. As a result,resetting for the electronic shuttering operation is performed under thesame condition on all the rows within the ordinary imaging section.

According to the second embodiment, even if the number of horizontalsync signals included in one frame interval has been changed, the device60 still can operate normally.

FIG. 18 illustrates a configuration for an amplifying solid-stateimaging device 70 according to a third embodiment of the presentinvention. The device 70 is different from the device 60 of the secondembodiment in the construction of the dummy row selector. The dummy rowselector B according to the third embodiment may have a configurationshown in FIG. 19. Responsive to the output Qm of the m^(th) rowselector, the dummy row selector B starts to output the control signalsSL_(dummy) and RS_(dummy) in synchronism with the horizontal sync signalHD. Thereafter, the dummy row selector B continuously outputs thecontrol signals SL_(dummy) and RS_(dummy) in synchronism with thehorizontal sync signal HD until the selector B receives the start pulsesignal VSIN or until resetting for the electronic shuttering operationon the m^(th) row ends.

FIG. 20 is a timing diagram illustrating control signals supplied fromthe row selectors in the row select encoder 3 and the dummy row selectorB within the amplifying solid-state imaging device 70 according to thethird embodiment. As shown in FIG. 20, after the readout operation hasbeen performed on the m^(th) row and until resetting for the electronicshuttering operation on the m^(th) row ends, the row select signalSL_(dummy) and the reset signal RS_(dummy) are repeatedly output insynchronism with the horizontal sync signal HD. Thus, after the readoutoperation has been performed on all the rows within the ordinary imagingsection and before resetting for the electronic shuttering operation hasbeen performed on all the rows within the ordinary imaging section, thereadout operation is repeatedly performed on the dummy row, not on theordinary imaging section. As a result, resetting for the electronicshuttering operation is performed under the same condition on all therows within the ordinary imaging section.

The device 70 according to the third embodiment is more advantageousthan the device 60 according to the second embodiment in that the dummyrow is driven a required minimum number of times to cut down the powerdissipation.

According to the second and third embodiments, just one dummy row isprovided. Alternatively, a plurality of dummy row may be providedinstead. For example, if two dummy rows are provided, then two dummy rowselectors are provided correspondingly. In such a case, the readoutoperation is performed alternately and repeatedly on these dummy rows insynchronism with the horizontal sync signal HD.

Also, according to the second and third embodiments, the readoutoperation on the dummy row is performed at a relatively late stage of aframe interval. However, according to the first embodiment, the readoutoperation on the dummy row may be performed at a relatively early stageof the frame interval. In the example illustrated in FIG. 3, the dummyrows (i.e., the (m+1)^(th) through 525^(th) rows) are disposed under theeffective pixel area (i.e., the 1^(st) through m^(th) rows).Alternatively, these dummy rows may be disposed over the effective pixelarea.

In the foregoing embodiments, the reset signal for the electronicshuttering operation is generated within the row select encoder 3 andthen output therefrom. However, the present invention is in no waylimited to such a specific embodiment. For example, a circuit forgenerating the reset signal for the electronic shuttering operation maybe disposed on the left-hand side of the imaging section shown in FIG.3. And a circuit for outputting a control signal for the readoutoperation (row selectors) may be disposed on the right-hand side of theimaging section. Also, the disposition of these circuits may be invertedhorizontally.

Moreover, according to the present invention, a pixel with aconfiguration shown in FIG. 21 may also be used. In the pixel shown inFIG. 21, a transfer gate 56 is provided in addition to the photodiode 21within the signal storage section and a potential of a capacitor 55,which is connected to a signal storage node, is applied to the gateelectrode of the driver 23. In other words, the source follower circuitsenses a potential at the signal storage node. As can be seen, thepresent invention is not limited to the pixel configuration exemplifiedin the foregoing embodiments. In FIG. 21, a signal TR₁ is supplied tothe transfer gate 56 for controlling the ON/OFF states thereof.

The present invention is generally applicable to any MOS solid-stateimaging device of such a type as amplifying and sensing signal chargestored on a pixel by making current flow through a load circuit. Forexample, a signal detector may be constructed using an inverter insteadof the source follower circuit. The key point is that the detector is atleast required to sense, amplify and output signal charge stored withina pixel before and after resetting.

In the foregoing embodiments, the row select encoder 3 includes twocolumns of vertical shift registers. Thus, the rows are selectedsequentially in a physical space. Alternatively, a row select encoderfor accessing rows located at physically random positions may also beused.

1-11. (canceled)
 12. An amplifying solid-state imaging devicecomprising: a plurality of pixels arranged in columns and rows, eachsaid pixel including a signal storage section for creating signal chargethrough photoelectric conversion and storing thereon signal informationcorresponding to the signal charge; reset signal supply means forgenerating a reset signal for an electronic shuttering operation andsupplying the reset signal to the pixels belonging to one of the rowsthat has been selected to perform the electronic shuttering operationthereon, thereby resetting the signal storage sections included in thepixels on the selected row; row selecting means for sequentiallyselecting at least one row of pixels from the pixels to perform a signalreadout operation thereon; and a signal detector for reading out thesignal information, which is stored in the signal storage sectionsincluded in the pixels on the row that has been selected by the rowselecting means to perform the signal readout operation thereon, thesignal detector including an amplifier that is connected in seriesbetween first and second power supplies, the signal detector sensing thesignal information by making a current flow between the first and secondpower supplies, amplifying the signal information and outputting theamplified signal information, wherein the pixels are classified into agroup of imaging pixels that are provided within an effective pixel areaand at least one row of dummy pixels that are provided in an area otherthan the effective pixel area, and wherein the imaging device furthercomprises dummy row selecting means for getting a pseudo signal readoutoperation performed repeatedly on the dummy pixel row after one of therows of pixels included in the group of imaging pixels has been selectedby the row selecting means during a frame interval and before a nextframe interval begins.
 13. The amplifying solid-state imaging device ofclaim 12, wherein the amplifier of the signal detector comprises:drivers provided for the respective pixels; and load devices providedfor the respective pixel columns.
 14. The amplifying solid-state imagingdevice of claim 13, wherein each said driver is a transistor comprising:a gate electrode connected to associated one of the signal storagesections; a drain connected to the first power supply; and a sourceconnected to associated one of the load devices.
 15. The amplifyingsolid-state imaging device of claim 13, wherein each said driver andassociated one of the load devices together form a source followercircuit.
 16. The amplifying solid-state imaging device of claim 12,wherein each said signal storage section comprises: a photodiode forperforming photoelectric conversion; a capacitor for storing thereoncharge created by the photodiode; and a transistor for electricallyconnecting or disconnecting the photodiode to/from the capacitor.
 17. Anamplifying solid-state imaging device comprising: a plurality of pixelsarranged in columns and rows, each said pixel including a signal storagesection for creating signal charge through photoelectric conversion andstoring thereon signal information corresponding to the signal charge;reset signal supply means for generating a reset signal for anelectronic shuttering operation and supplying the reset signal to thepixels belonging to one of the rows that has been selected to performthe electronic shuttering operation thereon, thereby resetting thesignal storage sections included in the pixels on the selected row; rowselecting means for selecting at least one row of pixels from the pixelsto perform a signal readout operation thereon; and a signal detector forreading out the signal information, which is stored in the signalstorage sections included in the pixels on the row that has beenselected by the row selecting means to perform the signal readoutoperation thereon, the signal detector including an amplifier that isconnected in series between first and second power supplies, the signaldetector sensing the signal information by making a current flow betweenthe first and second power supplies, amplifying the signal informationand then outputting the amplified signal information, wherein the pixelsare classified into a group of imaging pixels that are provided withinan effective pixel area and at least one row of dummy pixels that areprovided in an area other than the effective pixel area, and wherein theimaging device further comprises dummy row selecting means, whichselects the dummy pixel row in a period overlapping with a period duringwhich the reset signal for the electronic shuttering operation is beingsupplied to one row of pixels included in the group of imaging pixels,while no row of pixels included in the group of imaging pixels is beingselected by the row selecting means, thereby getting a pseudo signalreadout operation performed repeatedly on the dummy pixel row.
 18. Theamplifying solid-state imaging device of claim 17, wherein the amplifierof the signal detector comprises: drivers provided for the respectivepixels; and load devices provided for the respective pixel columns. 19.The amplifying solid-state imaging device of claim 18, wherein each saiddriver is a transistor comprising: a gate electrode connected toassociated one of the signal storage sections; a drain connected to thefirst power supply; and a source connected to associated one of the loaddevices.
 20. The amplifying solid-state imaging device of claim 18,wherein each said driver and associated one of the load devices togetherform a source follower circuit.
 21. The amplifying solid-state imagingdevice of claim 17, wherein each said signal storage section comprises:a photodiode for performing photoelectric conversion; a capacitor forstoring thereon charge created by the photodiode; and a transistor forelectrically connecting or disconnecting the photodiode to/from thecapacitor. 22-25. (canceled)